Amorphous silicon thin‐film transistors with two‐layer gate insulator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101171
Reference15 articles.
1. A thin-film transistor with a very thin a-Si:H layer and its application for an LC panel
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3. Self-alignment processed amorphous silicon ring oscillators
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1. Effect of chemical bonds on the properties of SiN in thin film transistor liquid crystal display;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-01
2. Raman spectra of a-Si1−xNx:H films following natural ageing;Journal of Molecular Structure;1997-06
3. Identification of infrared absorption peaks of amorphous silicon carbon hydrogen alloy prepared using ethylene;Journal of Applied Physics;1991-07
4. Study of the SiNx/Si interface by million electron volt ion channeling;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1990-05
5. Amorphous Silicon Thin-Film Transistors with SiOxNy/SiNxGate Insulators;Japanese Journal of Applied Physics;1990-02-20
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