High Q microcavity light emitting diodes with buried AlN current apertures-Reference-Cited by-同舟云学术

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High Q microcavity light emitting diodes with buried AlN current apertures

Published:2011-07-25 Issue:4 Volume:99 Page:041101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cheng Bo-Siao,Wu Yun-Lin,Lu Tien-Chang,Chiu Ching-Hsueh,Chen Cheng-Hung,Tu Po-Min,Kuo Hao-Chung,Wang Shing-Chung,Chang Chun-Yen

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3617418

Reference14 articles.

1. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes

4. Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity

5. A vertical cavity light emitting InGaN quantum well heterostructure

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1. Influence of anti-phase surface relief structure on optical mode and laser output power for 450 nm GaN-based VCSELs;Japanese Journal of Applied Physics;2023-01-01

2. GaN-Based Surface-Emitting Lasers;Handbook of GaN Semiconductor Materials and Devices;2017-10-13

3. Thermal lensing effects on lateral leakage in GaN-based vertical-cavity surface-emitting laser cavities;Optics Express;2017-04-18

4. A resonant‐cavity blue–violet light‐emitting diode with conductive nanoporous distributed Bragg reflector;physica status solidi (a);2017-02-24

5. Electrically Pumped III-N Microcavity Light Emitters Incorporating an Oxide Confinement Aperture;Nanoscale Research Letters;2017-01-05

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