Infrared photoconductor fabricated with HgTe/CdTe superlattice grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108766
Reference7 articles.
1. The CdTe/HgTe superlattice: Proposal for a new infrared material
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3. Characterization study of a HgTe‐CdTe superlattice by means of transmission electron microscopy and infrared photoluminescence
4. A high quantum efficiency in situ doped mid-wavelength infrared p-on-n homojunction superlattice detector grown by photoassisted molecular-beam epitaxy
5. Type III - Type I transition and strain-effect in Hg1−xCdxTeCdTe and Hg1−xZnxTeCdTe superlattices
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1. Photoresponse in photoconductor devices fabricated from HgTe-HgCdTe superlattices;Applied Physics Letters;2011-01-24
2. First-principles investigation of carrier Auger lifetime and impact ionization rate in narrow-gap superlattices;Acta Physica Sinica;2010
3. Hydrostatic pressure dependence of intersubband transitions of HgTe/Hg 1-x Cd x Te superlattices and FIR detector applications;SPIE Proceedings;2008-08-28
4. Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe;Journal of Electronic Materials;1999-04
5. Molecular beam epitaxy of HgCdTe;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997
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