Evaluation of crystalline quality of heteroepitaxial yttria‐stabilized zirconia films on silicon by means of ion beam channeling
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344457
Reference14 articles.
1. Preparation and Properties of Pyrolytic Zirconium Dioxide Films
2. Quadruply self-aligned stacked high-capacitance RAM using Ta2O5high-density VLSI dynamic memory
3. Heteroepitaxial Si films on yttria‐stabilized, cubic zirconia substrates
4. Formation of High-TcSuperconducting BiSrCaCu2OxFilms on ZrO2/Si(100)
5. Growth of crystalline zirconium dioxide films on silicon
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1. Epitaxial growth of zirconium dioxide films on sapphire substrates;Applied Surface Science;1997-04
2. Preparation and Characterization of BaTiO3 Thin Films on MgO-buffered Si(100) Substrates by RF Sputtering;Journal of Materials Research;1997-04
3. Fabrication of atomically defined oxide films on Si by laser molecular beam epitaxy;Physica B: Condensed Matter;1996-09
4. Heteroepitaxial Growth of Yttria-Stabilized Zirconia Film on Silicon by Reactive Sputtering;Japanese Journal of Applied Physics;1995-04-15
5. Heteroepitaxial growth of BaTiO3 films on Si by pulsed laser deposition;Applied Physics Letters;1995-03-13
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