Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon-Reference-Cited by-同舟云学术

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Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon

Published:2007-01-29 Issue:5 Volume:90 Page:051101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhukavin R. Kh.,Tsyplenkov V. V.,Kovalevsky K. A.,Shastin V. N.,Pavlov S. G.,Böttger U.,Hübers H.-W.,Riemann H.,Abrosimov N. V.,Nötzel N.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2431568

Reference15 articles.

1. Demonstration of a silicon Raman laser

2. An all-silicon Raman laser

3. Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors

4. Towards the First Silicon Laser

5. Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters

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1. Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:Bi;Semiconductors;2020-08

2. Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation;Semiconductors;2019-09

3. Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon;Quantum Electronics;2015-02-27

4. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures;Semiconductors;2015-01

5. FIRST-PRINCIPLES CALCULATIONS OF ELECTRON-PHONON SCATTERING;Annual Review of Heat Transfer;2014

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