The field-assisted emission effect on the acceptor energy of GaN:Mg in admittance spectroscopy measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1305841
Reference12 articles.
1. Electrical Transport Properties of p-GaN
2. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition
3. Growth and Doping of GaN Films by ECR-Assisted MBE
4. Mg‐doped p‐type GaN grown by reactive molecular beam epitaxy
5. p‐type conduction in Mg‐doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
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