New method to measure low Schottky barriers on n‐type silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336773
Reference4 articles.
1. Contact reaction between Si and rare earth metals
2. The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) andp‐type silicon
3. Low Schottky barrier of rare‐earth silicide onn‐Si
4. A modified forward I‐V plot for Schottky diodes with high series resistance
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1. Ab-initio calculations of the optical and magnetic properties of erbium silicide ErSi2;Journal of Physics and Chemistry of Solids;2009-10
2. Schottky contact barrier height extraction by admittance measurement;Journal of Applied Physics;2007-03
3. Semiconductor Contact Technology;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22
4. Ohmic contacts to moderately doped semiconductors—are they really Ohmic or low-barrier Schottky contacts?;Semiconductor Science and Technology;2005-04-27
5. Thickness‐dependent formation of Gd‐silicide compounds;Journal of Applied Physics;1988-12-15
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