Coalescence aspects of III-nitride epitaxy-Reference-Cited by-同舟云学术

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Coalescence aspects of III-nitride epitaxy

Published:2007-03 Issue:5 Volume:101 Page:054906
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lebedev V.,Tonisch K.,Niebelschütz F.,Cimalla V.,Cengher D.,Cimalla I.,Mauder Ch.,Hauguth S.,Ambacher O.,Morales F. M.,Lozano J. G.,González D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2464195

Reference43 articles.

1. First-principles calculations for defects and impurities: Applications to III-nitrides

2. Luminescence properties of defects in GaN

3. Recent developments in surface studies of GaN and AlN

4. Adatom diffusion at GaN (0001) and (0001̄) surfaces

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3. (S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN;Journal of Alloys and Compounds;2019-04

4. Formation of icosahedron twins during initial stages of heteroepitaxial diamond nucleation and growth;Journal of Applied Physics;2019-02-21

5. Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission;IEEE Photonics Journal;2016-10

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