Performance of 2 nm gate length carbon nanotube field-effect transistors with source∕drain underlaps
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2011788
Reference17 articles.
1. Ballistic carbon nanotube field-effect transistors
2. Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
3. Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes
4. Controlling doping and carrier injection in carbon nanotube transistors
5. Controlling Energy-Level Alignments at Carbon Nanotube/Au Contacts
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