Enhanced electron field emission from oriented AlN films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2195023
Reference23 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Field emitters based on Si tips with AlN coating
3. UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC
4. Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)‐SiC(0001)
5. Electron affinity of AlxGa1−xN(0001) surfaces
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