Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well-Reference-Cited by-同舟云学术

Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well

Published:2014-11-28 Issue:20 Volume:116 Page:203501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Balanta M. A. G.¹,Brasil M. J. S. P.¹,Iikawa F.¹,Brum J. A.¹,Mendes Udson C.¹,Danilov Yu. A.²,Dorokhin M. V.²^ORCID,Vikhrova Olga V.²,Zvonkov Boris N.²

Affiliation:

1. Instituto de Física “Gleb Wataghin,” Unicamp, 13083-859 Campinas, SP, Brazil

2. Physico-Technical Research Institute, Lobachevsky State University of Nizhni Novgorod, 603950 Nizhni Novgorod, Russia

Funder

São Paulo Research Foundation (FAPESP)

Russian Foundation for Basic Research (RFBR)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (Coordination for the Improvement of Higher Education Personnel)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (National Council for Scientific and Technological Development)

Ministry of Education and Science of the Russian Federation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4902857

Reference26 articles.

1. Spintronics: Fundamentals and applications

2. Dilute ferromagnetic semiconductors: Physics and spintronic structures

3. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

4. Magnetic anisotropy of singly Mn-doped InAs/GaAs quantum dots

5. Enhanced magneto-optical oscillations from two-dimensional hole-gases in the presence of Mn ions

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3. The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer;Journal of Magnetism and Magnetic Materials;2019-05

4. Hydrostatic Pressure and Temperature Effect on the Electron-Related Optical Responses in Symmetric and Asymmetric n-Type Double Delta-Doped GaAs Quantum Well Under Terahertz Laser Field;Journal of Electronic Materials;2019-03-11

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