Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors-Reference-Cited by-同舟云学术

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

Published:2014-12-07 Issue:21 Volume:116 Page:214504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Trinh Thanh Thuy¹,Jang Kyungsoo¹,Dao Vinh Ai¹,Yi Junsin¹

Affiliation:

1. Information and Communication Devices Laboratory, School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon, South Korea

Funder

Human Resources Development program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea Govement Ministry of Trade, Industry and Energy

Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded bythe Ministry of Education, Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4902856

Reference28 articles.

1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

2. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

3. Electrical characteristics of solution-processed InGaZnO thin film transistors depending on Ga concentration

4. Stable room temperature deposited amorphous InGaZnO[sub 4] thin film transistors

5. Amorphous Indium Gallium Zinc Oxide Semiconductor Thin Film Transistors Using O2Plasma Treatment on the SiNxGate Insulator

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