Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes
Author:
Affiliation:
1. Physics Department, Lancaster University, Lancaster LA1 4YB, United Kingdom
Funder
Centre for Defense Enterprise
Innovate UK
RCUK | Engineering and Physical Sciences Research Council
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5006883
Reference20 articles.
1. 240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes
2. The HgCdTe electron avalanche photodiode
3. Impact Ionization in InAs Electron Avalanche Photodiodes
4. Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays
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3. 3D Simple Monte Carlo Statistical Model for GaAs Nanowire Single Photon Avalanche Diode;IEEE Photonics Journal;2020-08
4. Appendix;InGaAs Avalanche Photodiodes for Ranging and Lidar;2020
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