Zn diffusion and disordering of an AlAs‐GaAs superlattice along its layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329985
Reference7 articles.
1. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
2. IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity
3. The Use of Metal-Organics in the Preparation of Semiconductor Materials
4. Device‐quality epitaxial AlAs by metalorganic‐chemical vapor deposition
5. High‐barrier cluster‐free AlxGa1−xAs‐AlAs‐GaAs quantum‐well heterostructure laser
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2. Self‐interstitial mechanism for Zn diffusion‐induced disordering of GaAs/AlxGa1−xAs (x=0.1−1) multiple‐quantum‐well structures;Journal of Applied Physics;1993-04-15
3. Lattice damage and atomic mixing induced by As++implantation and thermal annealing in AlAs/GaAs multiple quantum‐well structures;Journal of Applied Physics;1991-10-15
4. A proposed model to explain impurity‐induced layer disordering in AlAs‐GaAs heterostructures;Journal of Applied Physics;1989-03-15
5. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures;Journal of Applied Physics;1988-12-15
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