Lattice constants and thermal expansion of AlxGa1−xAs:Te
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360467
Reference27 articles.
1. Lattice Compression from Conduction Electrons in Heavily Doped Si:As
2. Lattice strain fromDXcenters and persistent photocarriers in Sn-doped and Si-dopedGa1−xAlxAs
3. The linear thermal expansion coefficient of a GaxIn1-xAsyyP1y layer on in P:Sn substrate
4. Temperature dependence of the lattice constant in doped and nonstoichiometric GaAs, GaAs1−xPx, and GaP
5. The Possible Influence of the Free Carrier Redistribution within the Conduction Band on the Thermal Expansion Behaviour in Te Doped GaAs
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1. Bowing of epitaxial layers grown on bulk GaN substrates;physica status solidi (c);2005-03
2. Cavity and Mirror Design for Vertical-Cavity Surface-Emitting Lasers;Springer Series in Photonics;2003
3. X-ray Study of Strain Relaxation in Heteroepitaxial Layers of Semiconductors Annealed under High Hydrostatic Pressure;Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials;2001
4. Thermal expansion of GaAs:Te and AlGaAs:Te at low temperatures;Journal of Applied Physics;1997-11
5. Influence of free electrons and point defects on the lattice parameters and thermal expansion of gallium nitride;Il Nuovo Cimento D;1997-02
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