The vertical longitudinal magnetoresistance in a van der Waals thin film of WTe2

Author:

Liu Y. S.123ORCID,Xiao H.4ORCID,Zhang C.5,Zhang C. W.6ORCID,Shi Y. G.6,Hu T.3,Schneider C. M.12ORCID

Affiliation:

1. Peter Grünberg Institute PGI-6, Forschungszentrum Jülich 1 , D-52425 Jülich, Germany

2. Fakultät für Physik, Universität Duisburg-Essen 2 , D-47057 Duisburg, Germany

3. Beijing Academy of Quantum Information Sciences 3 , Beijing 100193, China

4. Center for High Pressure Science and Technology Advanced Research 4 , Beijing 100094, China

5. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 5 , Shanghai 200050, China

6. Institute of Physics, Chinese Academy of Sciences 6 , Beijing 100190, China

Abstract

We report the magneto-transport measurements of thin film devices of the topological Weyl semimetal WTe2 with the applied current along and vertical to the in-plane directions. The device is composed of a van der Waals thin film of WTe2 sandwiched between top and bottom Au electrodes. At low temperatures, we observe not only a large unsaturated magnetoresistance and Shubnikov–de Haas oscillations with current in the in-plane direction but also a saturated vertical longitudinal magnetoresistance and quantum oscillations with current in the out-of-plane direction in a thin film of WTe2. Our work provides insight into the origin of the unsaturated magnetoresistance in WTe2 and may inspire non-planar engineering to reach higher integration in spintronics.

Funder

Key Programme

National Safety Academic Fund

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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