Resonant Raman scattering in self-organized InAs/GaAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1329321
Reference19 articles.
1. Theory of the linear and nonlinear optical properties of semiconductor microcrystallites
2. Exciton–LO-phonon couplings in spherical semiconductor microcrystallites
3. Photoluminescence of spherical quantum dots
4. Intrinsic mechanism for the poor luminescence properties of quantum-box systems
5. Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
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2. The role and growth of strain – reducing layer by molecular -beam epitaxy in a multi – stack InAs/(In,Ga)As sub - monolayer quantum dot heterostructure;Optical Materials;2021-04
3. Study on Inter Band and Inter Sub-Band Optical Transitions With Varying InAs/InGaAs Sub-Monolayer Quantum Dot Heterostructure Stacks Grown by Molecular Beam Epitaxy;IEEE Transactions on Nanotechnology;2020
4. Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field;The European Physical Journal B;2016-04
5. Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy;Physical Review B;2015-06-15
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