Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors-Reference-Cited by-同舟云学术

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Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

Published:1997-09 Issue:5 Volume:82 Page:2671-2675
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Llinares P.,Celi D.,Roux-dit-Buisson O.,Ghibaudo G.,Chroboczek J. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.366082

Reference14 articles.

1. Self-aligned transistors with polysilicon emitters for bipolar VLSI

2. Development of advanced CMOS-compatible bipolar transistor for BiCMOS technology

3. The design and electrical characteristics of high-performance single-poly ion-implanted bipolar transistors

4. Modeling hot-carrier effects in polysilicon emitter bipolar transistors

5. Noise as a diagnostic tool for quality and reliability of electronic devices

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3. On the geometrical dependence of low-frequency noise in SiGe HBTs;Solid-State Electronics;2006-11

4. Low-Frequency Noise;Silicon Heterostructure Handbook;2005-11

5. Reliability Issues;Silicon Heterostructure Handbook;2005-11

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