Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3-Reference-Cited by-同舟云学术

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Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3

Published:2000-12-04 Issue:23 Volume:77 Page:3731-3733
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

He Maoqi,Minus Indira,Zhou Piezhen,Mohammed S. Noor,Halpern Joshua B.,Jacobs Randy,Sarney Wendy L.,Salamanca-Riba Lourdes,Vispute R. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1329863

Reference15 articles.

1. Progress and prospects of group-III nitride semiconductors

2. Nitride-based semiconductors for blue and green light-emitting devices

3. Nitride-based semiconductors for blue and green light-emitting devices

4. Nitride-based semiconductors for blue and green light-emitting devices

5. Stability and electronic structure of GaN nanotubes from density-functional calculations

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