Formation of epitaxial CoSi2 films on Si and on Si/Si80Ge20 (100) by reactive deposition epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1491012
Reference25 articles.
1. Ion beam synthesis of epitaxial silicides: fabrication, characterization and applications
2. Growth and characterization of epitaxial Ni and Co silicides
3. Semiconducting silicide‐silicon heterojunction elaboration by solid phase epitaxy
4. Surface structure of epitaxialCoSi2crystals grown on Si(111)
5. High-temperature nucleation and silicide formation at the Co/Si(111)-7×7 interface: A structural investigation
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1. ESR Microscopy and Nanoscopy with “Induction” Detection;Israel Journal of Chemistry;2006-12
2. Stress evolution in Co/Ti/Si system;Materials Chemistry and Physics;2004-11
3. Single-crystalline growth of CoSi2 by refractory-interlayer-mediated epitaxy;Applied Surface Science;2004-06
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