RECOMBINATION SCHEME AND INTRINSIC GAP VARIATION IN GaAs1−x−Px SEMICONDUCTORS FROM ELECTRON BEAM ANDp‐nDIODE EXCITATION
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1754090
Reference8 articles.
1. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS
2. Pressure Effect on Resistivity ofGa(As1−xPx)
3. Light emission from forward biased p-n junctions in gallium phosphide
4. Light emission from forward biased p-n junctions in gallium phosphide
5. Band Structure of Gallium Phosphide from Optical Experiments at High Pressure
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