High net doping concentration responsible for critical diode breakdown behavior of upgraded metallurgical grade multicrystalline silicon solar cells-Reference-Cited by-同舟云学术

High net doping concentration responsible for critical diode breakdown behavior of upgraded metallurgical grade multicrystalline silicon solar cells

Published:2010-07-15 Issue:2 Volume:108 Page:023708
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kwapil Wolfram,Wagner Matthias,Schubert Martin C.,Warta Wilhelm

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3463332

Reference23 articles.

1. V. Hoffmann, K. Petter, J. Djordjevic-Reiss, E. Enebakk, J. D. Håkedal, R. Tronstad, T. Vlasenko, I. Buchovskaja, S. Beringov, and M. Bauer, Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain (WIP, Munich, 2008), p. 1117.

2. W. Kwapil, M. Kasemann, J. Giesecke, B. Michl, and W. Warta, Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain (WIP, Munich, 2008), p. 1797.

3. J.M. Wagner, J. Bauer, A. Lotnyk, and O. Breitenstein, Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain (WIP, Munich, 2008), p. 1164.

4. Diode breakdown related to recombination active defects in block-cast multicrystalline silicon solar cells

5. Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

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