Photoluminescence study of (111)‐oriented GaAs/GaAsP strained‐layer quantum well structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111991
Reference7 articles.
1. Strain-generated electric fields in [111] growth axis strained-layer superlattices
2. Optical properties of strained-layer superlattices with growth axis along [111]
3. Magnitude, origin, and evolution of piezoelectric optical nonlinearities in strained [111]B InGaAs/GaAs quantum wells
4. GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy
5. Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs1-xPxStrained-Barrier Single Quntum Well Structures
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1. First- and second-order piezoelectricity in III-V semiconductors;Physical Review B;2011-11-28
2. Electronic structure of strained-layer quantum wells;Surface Science;1997-10
3. Optical property of a novel (111)-oriented quantum structure;Applied Physics Letters;1997-09-29
4. Many-body effects and carrier dynamics in CdSe/CdS Stark superlattices;Physical Review B;1995-04-15
5. Optical property of GaAsP/AlGaAs strained‐layer quantum well grown on GaAs‐(111)B substrate;Applied Physics Letters;1995-01-09
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