Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations-Reference-Cited by-同舟云学术

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

Published:2018-01-15 Issue:3 Volume:112 Page:032106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Butté Raphaël¹^ORCID,Lahourcade Lise¹,Uždavinys Tomas Kristijonas²,Callsen Gordon¹,Mensi Mounir²,Glauser Marlene¹,Rossbach Georg¹,Martin Denis¹,Carlin Jean-François¹,Marcinkevičius Saulius²,Grandjean Nicolas¹^ORCID

Affiliation:

1. École Polytechnique Fédérale de Lausanne (EPFL), Institute of Physics, CH-1015 Lausanne, Switzerland

2. Department of Applied Physics, KTH Royal Institute Technology, Electrum 229, S-16440 Kista, Sweden

Funder

Swiss National Science Foundation

Svenska Forskningsrådet Formas

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5010879

Reference45 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. White light emitting diodes with super-high luminous efficacy

3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

4. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

5. Solid phase immiscibility in GaInN

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