Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations
Author:
Affiliation:
1. École Polytechnique Fédérale de Lausanne (EPFL), Institute of Physics, CH-1015 Lausanne, Switzerland
2. Department of Applied Physics, KTH Royal Institute Technology, Electrum 229, S-16440 Kista, Sweden
Funder
Swiss National Science Foundation
Svenska Forskningsrådet Formas
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5010879
Reference45 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
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4. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
5. Solid phase immiscibility in GaInN
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