Stress reduction resulting in reduced degradation in GaAs lasers grown on Si substrates by post growth patterning and SiO2layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346448
Reference14 articles.
1. Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates
2. Degradation of GaAs lasers and light-emitting diodes on silicon substrates
3. Room‐temperature continuous operation ofp‐nAlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si
4. Stability of 300 K continuous operation ofp‐nAlxGa1−xAs‐GaAs quantum well lasers grown on Si
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1. Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate;Applied Physics Letters;2006-07-24
2. Metamorphic 1.5 µm-range quantum dot lasers on a GaAs substrate;Semiconductor Science and Technology;2006-04-03
3. Continuous-wave Lasing of Single-Mode Metamorphic Quantum Dot Lasers for the 1.5-μm Spectral Region;Semiconductors;2005
4. Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates;Applied Physics Letters;1999-03-08
5. Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates;Japanese Journal of Applied Physics;1995-06-15
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