Improved reliability of Mo nanocrystal memory with ammonia plasma treatment-Reference-Cited by-同舟云学术

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Improved reliability of Mo nanocrystal memory with ammonia plasma treatment

Published:2009-02-09 Issue:6 Volume:94 Page:062106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin Chao-Cheng,Chang Ting-Chang,Tu Chun-Hao,Chen Wei-Ren,Hu Chih-Wei,Sze Simon M.,Tseng Tseung-Yuen,Chen Sheng-Chi,Lin Jian-Yang

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3081021

Reference18 articles.

1. Tunnel oxide thickness dependence of activation energy for retention time in SiGe quantum dot flash memory

2. Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/

3. Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance

4. Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of charge storage dielectric thickness on hybrid gadolinium oxide nanocrystal and charge trapping nonvolatile memory;Current Applied Physics;2014-03

2. High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment Technique;IEEE Transactions on Electron Devices;2013-10

3. Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment;Nanotechnology;2012-10-26

4. Robust Data Retention and Superior Endurance of Silicon–Oxide–Nitride–Oxide–Silicon-Type Nonvolatile Memory with NH$_{3}$-Plasma-Treated and Pd-Nanocrystal-Embedded Charge Storage Layer;Japanese Journal of Applied Physics;2012-04-20

5. Robust Data Retention and Superior Endurance of Silicon–Oxide–Nitride–Oxide–Silicon-Type Nonvolatile Memory with NH3-Plasma-Treated and Pd-Nanocrystal-Embedded Charge Storage Layer;Japanese Journal of Applied Physics;2012-04-01

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