Characterization of dilute InPN layers grown by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3028998
Reference30 articles.
1. Bowing parameter of the band-gap energy of GaNxAs1−x
2. Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments
3. Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1−xNx layers
4. Terahertz response of hot electrons in dilute nitride Ga(AsN) alloys
5. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
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