Temperature dependence of the photoluminescence of Zn1−xCdxSe/ZnSe strained‐layer quantum wells-Reference-Cited by-同舟云学术

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Temperature dependence of the photoluminescence of Zn1−xCdxSe/ZnSe strained‐layer quantum wells

Published:1995-07-03 Issue:1 Volume:67 Page:103-105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tournié E.,Morhain C.,Leroux M.,Ongaretto C.,Faurie J. P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.115496

Reference19 articles.

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ZnSe/ZnCdSeTe Superlattice Nanotips;IEEE Transactions on Nanotechnology;2011-07

2. Growth and Characterization of ZnSe/CdSe Multiquantum Disks;IEEE Journal of Selected Topics in Quantum Electronics;2011-07

3. ZnSe/ZnCdSe heterostructure nanowires;Journal of Crystal Growth;2010-05

4. ZnSe/ZnSeTe Superlattice Nanotips;Nanoscale Research Letters;2010-03-28

5. Optical characterization of ZnSe epilayers and ZnCdSe∕ZnSe quantum wells grown on Ge∕Ge0.95Si0.05∕Ge0.9Si0.1∕Si virtual substrates;Journal of Applied Physics;2006-03-15

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