Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2817537
Reference17 articles.
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4. High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD
5. A Si-based quantum-dot light-emitting diode
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1. Direct-Bandgap Electroluminescence From Germanium With Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure;IEEE Transactions on Electron Devices;2020-05
2. Structural and optical manipulation of colloidal Ge1-xSnx nanocrystals with experimentally synthesized sizes: Atomistic tight-binding theory;Superlattices and Microstructures;2017-02
3. Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands;Semiconductors;2016-11
4. Energy Gap Tuning and Carrier Dynamics in Colloidal Ge1–xSnx Quantum Dots;The Journal of Physical Chemistry Letters;2016-08-11
5. Optimized Si0.5Ge0.5/Si Interface Quality by the Process of Low Energy Hydrogen Plasma Cleaning and Investigation by Positron Annihilation Spectroscopy;Procedia Engineering;2014
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