Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4803688
Reference24 articles.
1. Electrical switching and Mott transition in VO2
2. Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse
3. rf-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition
4. Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry
5. Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis
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