Electrical characterization of defects introduced in n-type Ge during indium implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2360922
Reference11 articles.
1. Semiconductors and Semimetals;Hull R.,1999
2. Irradiation-induced defects in Ge studied by transient spectroscopies
3. Electronic properties of antimony-vacancy complex in Ge crystals
4. Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi
5. Electronic properties of vacancy–oxygen complex in Ge crystals
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1. Modification of the Surface of Germanium and the Formation of a Porous Layer During Implantation with Indium Ions;Nanobiotechnology Reports;2023-12
2. Enhanced electrical activation in In-implanted Ge by C co-doping;Applied Physics Letters;2015-11-23
3. Structural and electrical properties of In-implanted Ge;Journal of Applied Physics;2015-10-28
4. Electrical characterisation of ruthenium Schottky contacts on n-Ge (100);Physica B: Condensed Matter;2012-05
5. Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2MeV proton irradiation;Physica B: Condensed Matter;2011-08
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