He beam annealing and self-healing of Kr implanted BaWO4 at low temperature
Author:
Affiliation:
1. School of Physics and Technology, University of Jinan, Jinan 250022, People’s Republic of China
2. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany
Funder
National Natural Science Foundation of China
German Bundesministerium fur Bildung und Forschung
Natural Science Foundation of Shandong Province
German DAAD-Wong Kuan Cheng Fellowship
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0048091
Reference45 articles.
1. Radiation hardness of Kr+ ion implanted BaWO4 at room temperature
2. Czochralski growth and radiation hardness of BaWO4 Crystals
3. Single-Frequency BaWO4 Raman MOPA at 1178 nm with 100-ns Pulse Pump
4. Luminescence properties of BaWO4 single crystal
5. Pressure effects on the structural and electronic properties of ABX4 scintillating crystals
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1. Intense optical activation of Eu-doped KTiOAsO4 crystal induced by ion implantation;Optical Materials;2024-04
2. Theoretical Investigation of the EPR G-Factor for the Axial Symmetry Ce3+ Center in the BaWO4 Single Crystal;Crystals;2021-07-09
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