Compensation of shallow impurities in oxygen‐doped metalorganic vapor phase epitaxy grown GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363811
Reference21 articles.
1. Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE
2. Effect of Se-doping on deep impurities in AlxGa1−xAs grown by metalorganic chemical vapor deposition
3. The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures
4. Effects of oxygen and water vapour introduction during MOCVD growth of GaAlAs
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