Demonstration of mid-wavelength infrared nBn photodetectors based on type-II InAs/InAs1-xSbx superlattice grown by metal-organic chemical vapor deposition
Author:
Affiliation:
1. Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA
Funder
Defense Advanced Research Projects Agency
Army Research Office
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5100617
Reference27 articles.
1. A new semiconductor superlattice
2. Advances in mid-infrared detection and imaging: a key issues review
3. InAs/GaSb type-II superlattice infrared detectors: Future prospect
4. Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm
5. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
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