Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer-Reference-Cited by-同舟云学术

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Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

Published:2016-08-22 Issue:8 Volume:109 Page:082106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tran Tuan T.¹^ORCID,Alkhaldi Huda S.¹,Gandhi Hemi H.²,Pastor David²,Huston Larissa Q.¹^ORCID,Wong-Leung Jennifer¹^ORCID,Aziz Michael J.²,Williams J. S.¹

Affiliation:

1. Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200, Australia

2. Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA

Funder

Ministerio de Educación, Cultura y Deporte (MECD)

Air Force Office of Scientific Research (AFOSR)

Australian Research Council (ARC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4961620

Reference23 articles.

1. Ga-implantation in Ge: Electrical activation and clustering

2. Aluminium Implantation in Germanium: Uphill Diffusion, Electrical Activation, and Trapping

3. Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge

4. Honeycomb voids due to ion implantation in germanium

5. Ion implantation damage and annealing in germanium

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1. Enabling tailored nanoporous germanium by quantifying the evolution of structural properties during self-irradiation;Applied Surface Science;2024-08

2. Native Oxide Layer Role during Cryogenic‐Temperature Ion Implantations in Germanium;physica status solidi (a);2024-07-08

3. Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods;Journal of Vacuum Science & Technology B;2024-06-12

4. A scalable, resource-efficient process for synthesis of self-supporting germanium nanomembranes;Materials Science in Semiconductor Processing;2024-03

5. High hole mobility and non-localized states in amorphous germanium;APL Materials;2023-04-01

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