Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers-Reference-Cited by-同舟云学术

Simulation of the interband s–d and intraband s–s electron–phonon contributions to the temperature dependence of the electrical resistivity in Fe/Cr multilayers

Published:1999-04-15 Issue:8 Volume:85 Page:4433-4435
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Almeida B. G.,Amaral V. S.,Sousa J. B.,Colino R.,Schuller I. K.,Moschalkov V. V.,Bruynseraede Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.370365

Reference5 articles.

1. Connection between giant magnetoresistance and structure in molecular-beam epitaxy and sputtered Fe/Cr superlattices

2. Calculation of the temperature dependence of the giant MR and application to Co/Cu multilayers

3. Temperature dependence of the magnetoresistance of sputtered Fe/Cr superlattices

4. Temperature dependence of the magnetoresistance of sputtered Fe/Cr superlattices

5. Temperature Dependence of Giant Magnetoresistance in Co/Cu Superlattices

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