Influence of a-Si:H deposition power on surface passivation property and thermal stability of a-Si:H/SiNx:H stacks
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3703659
Reference19 articles.
1. Surface passivation properties of boron-doped plasma-enhanced chemical vapor deposited hydrogenated amorphous silicon films on p-type crystalline Si substrates
2. Low-temperature formation of local Al contacts to a-Si:H-passivated Si wafers
3. Role of a-Si:H bulk in surface passivation of c-Si wafers
4. Metastability of SiNx/a-Si:H crystalline silicon surface passivation for PV application
5. Thermal stability of amorphous silicon/silicon nitride stacks for passivating crystalline silicon solar cells
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hydrogen Concentration in Photovoltaic a-Si:H Annealed at Different Temperatures Measured by Neutron Reflectometry;IEEE Journal of Photovoltaics;2018-07
2. Super Critical Fluid Technique to Enhance Current Output on Amorphous Silicon-Based Photovoltaic;IEEE Electron Device Letters;2017-10
3. Thermal stability of photovoltaic a-Si:H determined by neutron reflectometry;Applied Physics Letters;2014-12-08
4. Neutron and x-ray Reflectometry Investigations of Amorphous Silicon-based Surface Passivation Layers;Energy Procedia;2014
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