Defect localization of metal interconnection lines in 3-dimensional through-silicon-via structures by differential scanning photocapacitance microscopy-Reference-Cited by-同舟云学术

Defect localization of metal interconnection lines in 3-dimensional through-silicon-via structures by differential scanning photocapacitance microscopy

Published:2018-02-12 Issue:7 Volume:112 Page:071904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jacobs K. J. P.¹²^ORCID,Stucchi M.¹^ORCID,Afanas'ev V. V.³^ORCID,Gonzalez M.¹,Croes K.¹,De Wolf I.¹²^ORCID,Beyne E.¹

Affiliation:

1. Imec, Kapeldreef 75, B-3001 Leuven, Belgium

2. KU Leuven, Department Materials Engineering, B-3001 Leuven, Belgium

3. KU Leuven, Department Physics and Astronomy, B-3001 Leuven, Belgium

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5012892

Reference21 articles.

1. The 3-D Interconnect Technology Landscape

2. Reliability Challenges Related to TSV Integration and 3-D Stacking

3. Reliable Via-Middle Copper Through-Silicon Via Technology for 3-D Integration

4. Three-dimensional micro-Raman spectroscopy mapping of stress induced in Si by Cu-filled through-Si vias

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4. E-field induced keep-out zone determination method of through-silicon vias for 3-D ICs;Microelectronics Reliability;2019-07