Actual temperatures of growing surfaces of III-nitride-based materials depending on substrates and forced convection conditions in metal organic chemical vapor deposition-Reference-Cited by-同舟云学术

Actual temperatures of growing surfaces of III-nitride-based materials depending on substrates and forced convection conditions in metal organic chemical vapor deposition

Published:2009-10 Issue:7 Volume:106 Page:073512
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Choi Suk,Kim Hee Jin,Ryou Jae-Hyun,Dupuis Russell D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3238488

Reference42 articles.

1. High pressure growth of bulk GaN from solutions in gallium

2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

3. Microstructure of thick AlN grown on sapphire by high-temperature MOVPE

4. Growth of AIN on Etched 6H-SiC(0001) Substrates via MOCVD

5. GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates

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