Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform-Reference-Cited by-同舟云学术

Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

Published:2015-10-26 Issue:17 Volume:107 Page:174101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Alfaraj Nasir¹^ORCID,Hussain Aftab M.¹,Torres Sevilla Galo A.¹,Ghoneim Mohamed T.¹^ORCID,Rojas Jhonathan P.¹,Aljedaani Abdulrahman B.²,Hussain Muhammad M.¹

Affiliation:

1. Integrated Nanotechnology Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia

2. High-Speed Fluids Imaging Laboratory, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia

Funder

KAUST OCRF

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4934355

Reference47 articles.

1. Transformational Silicon Electronics

2. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

3. High temperature study of flexible silicon-on-insulator fin field-effect transistors