Fabrication and characterization of p-channel Si double quantum dots-Reference-Cited by-同舟云学术

Fabrication and characterization of p-channel Si double quantum dots

Published:2014-09-15 Issue:11 Volume:105 Page:113110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yamada Ko¹,Kodera Tetsuo²³,Kambara Tomohiro¹,Oda Shunri¹

Affiliation:

1. Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan

2. Department of Physical Electronics, Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan

3. PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference35 articles.

1. Charge-Qubit Operation of an Isolated Double Quantum Dot

2. An All-Optical Quantum Gate in a Semiconductor Quantum Dot

3. The Physical Implementation of Quantum Computation

4. Quantum computation with quantum dots

5. Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots

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