Calculation of hot electron distributions in silicon by means of an evolutionary algorithm

Author:

Jakumeit J.,Ravaioli U.,Hess K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Simulation of Nanoscale Electronic Systems;Advances in Computers;2007

2. Semiconductor transport simulation with the local iterative Monte Carlo technique;IEEE Transactions on Electron Devices;2001-05

3. Local iterative Monte Carlo analysis of electron-electron interaction in short-channel Si-MOSFETs;IEEE Transactions on Electron Devices;2001

4. COMPUTATIONAL ASPECTS OF THE LOCAL ITERATIVE MONTE CARLO TECHNIQUE;International Journal of Modern Physics C;2000-06

5. Comparison of statistical enhancement methods for Monte Carlo semiconductor simulation;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;1998

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