Band-gap blue shift by impurity-free vacancy diffusion in 1.5-μm-strained InGaAsP/InP multiple quantum-well laser structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118213
Reference13 articles.
1. Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion
2. Monolithic integration of a DFB laser and an MQW optical modulator in the 1.5 µm wavelength range
3. Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth
4. Quantum‐well intermixing for optoelectronic integration using high energy ion implantation
5. Strained-InGaAsP MQW electroabsorption modulator integrated DFB laser
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1. Arsenic Irradiation Induced Atomic Interdiffusion of InxGa1-xAs/InP Quantum Well Structures;Atom Indonesia;2013-02-13
2. Ring resonator with multimode waveguide turning-mirror couplers in InGaAsP-InP;Optics Communications;2011-07
3. Inductively Coupled Argon Plasma-Enhanced Quantum-Well Intermixing: Cap Layer Effect and Plasma Process Influence;IEEE Journal of Quantum Electronics;2009-08
4. Influence of SiO2and TiO2dielectric layers on the atomic intermixing of InxGa1−xAs/InP quantum well structures;Semiconductor Science and Technology;2007-07-20
5. Distributed Bragg reflector laser using buried SiO2 grating and self-aligned band gap tuning;Applied Physics Letters;2007-04-23
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