Trap densities and transport properties of pentacene metal–oxide–semiconductor transistors: II—Numerical modeling of dc characteristics-Reference-Cited by-同舟云学术

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Trap densities and transport properties of pentacene metal–oxide–semiconductor transistors: II—Numerical modeling of dc characteristics

Published:2014-06-28 Issue:24 Volume:115 Page:244505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Basile A. F.¹,Kyndiah A.²,Biscarini F.²³,Fraboni B.¹

Affiliation:

1. Department of Physics and Astronomy, University of Bologna, Bologna 40127, Italy

2. Institute for the Study of Nano-structured Materials, CNR, Bologna 40129, Italy

3. Department of Life Sciences, University of Modena and Reggio Emilia, Modena 41125, Italy

Funder

Ministry for Education, University and Scientific Research of Italy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4884856

Reference35 articles.

1. ac Conductivity of Scandium Oxide and a New Hopping Model for Conductivity

2. Double layer capacitance measured by organic field effect transistor operated in water

3. Ultra-low voltage, organic thin film transistors fabricated on plastic substrates by a highly reproducible process

4. The electric field dependence of the mobility in molecularly doped polymers

5. How to Find Out the Density of States in Disordered Organic Semiconductors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytic models for organic field-effect transistors based on exponential and power mobility models;Communications in Theoretical Physics;2023-05-24

2. Investigation of the dimensionality of charge transport in organic field effect transistors;Physical Review B;2017-02-03

3. Numerical modeling of current-voltage characteristics to extract transport properties of organic semiconductors;Journal of Applied Physics;2014-11-21

4. Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors. I. Analytical modeling of time-dependent characteristics;Journal of Applied Physics;2014-06-28

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