Multiple phosphorus chemical sites in heavily phosphorus-doped diamond-Reference-Cited by-同舟云学术

Multiple phosphorus chemical sites in heavily phosphorus-doped diamond

Published:2011-02-21 Issue:8 Volume:98 Page:082107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Okazaki Hiroyuki,Yoshida Rikiya,Muro Takayuki,Nakamura Tetsuya,Wakita Takanori,Muraoka Yuji,Hirai Masaaki,Kato Hiromitsu,Yamasaki Satoshi,Takano Yoshihiko,Ishii Satoshi,Oguchi Tamio,Yokoya Takayoshi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3554699

Reference19 articles.

1. Boron, the Dominant Acceptor in Semiconducting Diamond

2. Measurement of the substitutional nitrogen activation energy in diamond films

3. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

4. Electronic states of phosphorus in diamond

5. Low-temperature spectroscopic study ofn-type diamond

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