A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells-Reference-Cited by-同舟云学术

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

Published:2016-03 Issue:3 Volume:6 Page:035216
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Halim Mohammad Abdul¹^ORCID,Islam Muhammad Monirul¹^ORCID,Luo Xianjia¹,Sakurai Takeaki¹,Sakai Noriyuki²,Kato Takuya²,Sugimoto Hiroki²,Tampo Hitoshi³,Shibata Hajime³,Niki Shigeru³,Akimoto Katsuhiro¹

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

2. Energy Solution Business Center, Showa Shell Sekiyu K.K., Minato, Tokyo 135-8074, Japan

3. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

Funder

Ministry of Economy, Trade and Industry (METI)

New Energy and Industrial Technology Development Organization (NEDO)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4944911

Reference37 articles.

1. Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%

2. Materials Availability Expands the Opportunity for Large-Scale Photovoltaics Deployment

3. Materials availability for large-scale thin-film photovoltaics

4. Preparation of Cu2ZnSnS4 thin films by hybrid sputtering

5. Enhanced Conversion Efficiencies of Cu2ZnSnS4-Based Thin Film Solar Cells by Using Preferential Etching Technique

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