Fabrication of ferroelectric SrBi2Ta2O9 capacitor films using plasma-assisted metalorganic chemical vapor deposition and their electrical properties
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1353564
Reference20 articles.
1. Fatigue-free ferroelectric capacitors with platinum electrodes
2. Characteristics of Bismuth LayeredSrBi2Ta2O9Thin-Film Capacitors and Comparison withPb(Zr,Ti)O3
3. Preparation of SrBi2Ta2O9 ferroelectric thin film by rf magnetron sputtering
4. Analysis of the Dependence of Ferroelectric Properties of Strontium Bismuth Tantalate (SBT) Thin Films on the Composition and Process Temperature
5. Evolution of Ferroelectric Structure in SrBi2Ta2O9Thin Films Prepared Using Triple Alkoxides on Pt-Passivated Si
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2. Phase control of iridium and iridium oxide thin films in atomic layer deposition;Journal of Applied Physics;2008-01-15
3. Barium acylpyrazolonate derivatives stabilized by O- and N-donor ligands: synthesis, spectral and structural characterization;Inorganica Chimica Acta;2005-03
4. Formation of PZT Thin Films on 6-Inch Wafers by Liquid Delivery Metalorganic Chemical Vapor Deposition;Key Engineering Materials;2004-05
5. Low Voltage Switching Characteristics of 60 nm Thick SrBi[sub 2]Ta[sub 2]O[sub 9] Thin Films Deposited by Plasma-Enhanced ALD;Electrochemical and Solid-State Letters;2004
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