Longitudinal carrier density profiling in semiconductor lasers via spectral analysis of side spontaneous emission
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363005
Reference9 articles.
1. Gain spectra in GaAs double−heterostructure injection lasers
2. Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers
3. Use of photocurrent difference spectroscopy to determine higher confined states in wide multiquantum well structures
4. Gain nonlinearity and its temperature dependence in bulk- and quantum-well quaternary lasers
5. Determination of nonlinear gain coefficient of semiconductor lasers from above threshold spontaneous emission measurement
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Two-dimensional carrier density distribution inside a high power tapered laser diode;Applied Physics Letters;2011-05-30
2. Influence of nonuniform carrier distribution on the polarization dependence of modal gain in multiquantum-well lasers and semiconductor optical amplifiers;IEEE Journal of Quantum Electronics;2000-09
3. Amplified spontaneous emission spectroscopy on semiconductor optical amplifiers subject to active light injection;Applied Physics Letters;1998-06-08
4. Above-threshold longitudinal profiling of carrier nonpinning and spatial modulation in asymmetric cavity lasers;Journal of Applied Physics;1998-04
5. Investigations of the spectral characteristics of 980-nm InGaAs-GaAs-AlGaAs lasers;IEEE Journal of Quantum Electronics;1997
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