Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1409277
Reference21 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. GaN Growth Using GaN Buffer Layer
3. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
4. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
5. Transmission electron microscopy study of the nitridation of the (0001) sapphire surface
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