Measurement of interdiffusion in II–VI quantum‐well structures using optical methods
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361092
Reference17 articles.
1. The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structures
2. Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth
3. The effects of silicon and beryllium on the interdiffusion of GaAs/ AlxGa1−xAs and InxGa1−xAs/GaAs quantum well structures
4. Vacancy controlled interdiffusion of the group V sublattice in strained InGaAs/InGaAsP quantum wells
5. Strain and interdiffusion in semiconductor heterostructures
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3. Optical and structural studies of the effect of spacers in modulation-doped ZnSe/Zn1−xCdxSe quantum wells;Journal of Applied Physics;1999-07-15
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5. Differentiating between constant and concentration-dependent diffusion coefficients via the optical spectroscopy of excitons in quantum wells;Semiconductor Science and Technology;1996-07-01
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